SSM5H11TU 2014-03-01 1 silicon n channel mos type (u-mos )/silicon epitaxial schottky barrier diode SSM5H11TU dc-dc converter applications ? 4.0-v drive ? combined an n-ch mosfet and a schottky barrier diode in one package. ? low r ds(on) and low v f absolute maximum ratings mosfet (ta = 25c) characteristic symbol rating unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v dc i d 1.6 drain current pulse i dp 3.2 a drain power dissipation p d (note 1) 500 mw channel temperature t ch 150 c schottky barrier diode (ta = 25c) characteristics symbol rating unit repetitive peak reverse voltage v rrm 30 v average forward current i f(av) 0.7 a peak one cycle surge forward current i fsm 2 (50hz) a junction temperature t j 125 c mosfet and diode (ta = 25c) characteristics symbol rating unit storage temperature range t stg ? 55 to 125 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temper ature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: mounted on fr4 board (25.4 mm 25.4 mm 1.6 mm, cu pad: 645 mm 2 ) marking equivalent circuit (top view) unit: mm ufv jedec D jeita D toshiba 2-2r1a weight: 7 mg (typ.) 5 1 3 keu 2 4 5 13 2 4 start of commercial production 2008-04
SSM5H11TU 2014-03-01 2 mosfet electrical character istics (ta = 25c) characteristics symbol test conditions min typ. max unit v (br) dss i d = 1 ma, v gs = 0 v 30 ? ? drain-source breakdown voltage v (br) dsx i d = 1 ma, v gs = -20 v 15 ? ? v drain cutoff current i dss v ds = 30 v, v gs = 0 v ? ? 1 a gate leakage current i gss v gs = 16 v, v ds = 0 v ? ? 1 a gate threshold voltage v th v ds = 5 v, i d = 1 ma 1.0 ? 2.6 v forward transfer admittance |y fs | v ds = 5 v, i d = 1a (note 2) 1.9 3.7 ? s i d = 1 a, v gs = 10 v (note 2) ? 96 122 drain-source on-resistance r ds (on) i d = 0.5 a, v gs = 4 v (note 2) ? 130 182 m input capacitance c iss ? 180 ? output capacitance c oss ? 34 ? reverse transfer capacitance c rss v ds = 15 v, v gs = 0 v, f = 1 mhz ? 27 ? pf total gate charge q g ? 5.1 ? gate? source charge q gs ? 3.9 ? gate? drain charge q gd v ds = 15 v, i d = 1.6 a, v gs = 10 v ? 1.2 ? nc turn-on time t on ? 9.5 ? switching time turn-off time t off v dd = 15 v, i d = 0.5 a v gs = 0 to 4 v, r g = 10 ? 9.0 ? ns drain-source forward voltage v dsf i d = -1.6 a, v gs = 0 v (note 2) ? -0.8 -1.2 v note 2: pulse test switching time test circuit (a) test circuit (b) v in precaution v th can be expressed as voltage between gate and source when the low operating current value is i d = 1 ma for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th . (the relationship can be established as follows: v gs (off) < v th < v gs (on) ) be sure to take this into consideration when using the device. (c) v out v dd = 15 v r g = 10 duty 1% v in : t r , t f < 5 ns common source ta = 25c v dd out in 4 v 0 10 s r g t f t on 90% 10% 4 v 0 v 10% 90% t off t r v dd v ds ( on )
SSM5H11TU 2014-03-01 3 schottky barrier diode electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit peak forward voltage v fm (1) i f = 0.5 a ? 0.34 0.41 v peak forward voltage v fm (2) i f = 0.7 a ? 0.37 0.44 v repetitive peak reverse current i rrm v r = 15 v ? 60 200 a junction capacitance c t v r = 0 v, f = 1 mhz ? 139 ? pf precaution the schottky barrier diode in this device has large reverse cu rrent leakage compared to typical switching diodes. thus, excessive operating temperature or voltage may cause thermal runaway. to avoid this problem, be sure to take both forward and reverse loss into consideration. handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing , and containers and other objects that come into direct contact with devices should be made of antistatic materials. the channel-to-ambient thermal resistance r th (ch-a) and the drain power dissipation p d vary according to the board material, board area, board thickness and pad area. when using this device, be sure to take heat dissipation fully into account.
SSM5H11TU 2014-03-01 4 mosfet ambient temperature ta (c) ambient temperature ta (c) r ds (on) ? i d drain-source voltage v ds (v) i d ? v ds drain current i d (a) 0 3 0 0.2 0.4 0.6 2 v gs = 2.5 v 10 v 1 common source ta = 25 c 4.0 v 3.3 v 3.0 v gate-source voltage v gs (v) i d ? v gs drain current i d (a) 10 0 0.1 1 0.001 0.01 0.0001 4.0 ? 25 c ta = 100 c 25 c 2.0 v th ? ta gate threshold voltage v th (v) 2.0 0 ? 50 0 150 50 100 r ds (on) ? ta drain-source on-resistance r ds (on) (m ? ) 0 ? 50 0 50 150 200 100 400 drain-source on-resistance r ds (on) (m ? ) 0 gate-source voltage v gs (v) 10 0 r ds (on) ? v gs 400 200 20 ? 25 c ta = 100 c 25 c i d = 1.0a common source common source v ds = 5 v v gs = 10 v drain current i d (a) drain-source on-resistance r ds (on) (m ? ) 0 1 2 3 0 400 200 4.0 v common source ta = 25c 4 4 1.0 common source v ds = 5 v i d = 1 ma 5.0 v common source 0.8 1.0 3.5 v i d = 0.5 a / v gs = 4.0 v 1.0 a / 10 v 300 100 300 100 300 100
SSM5H11TU 2014-03-01 5 mosfet drain current i d (a) forward transfer admittance ? y fs ? (s) |y fs | ? i d 0.1 10 1 0.1 1 3 0.3 0.01 drain-source voltage v ds (v) c ? v ds capacitance c (pf) 1 0.1 1 10 100 10 100 30 50 3 5 common source ta = 25c f = 1 mhz v gs = 0 v drain current i d (a) switching time t (ns) t ? i d 1 0.01 100 0.1 1000 1 10 10 t f t on t r common source v dd = 15 v v gs = 0 to 4.0 v ta = 25 c r g = 10 drain reverse current i dr (a) drain-source voltage v ds (v) i dr ? v ds 10 0 0.1 1 0.001 0.01 ?0.5 ?1.0 ? 25 c ta =100 c 25 c ?1.5 common source v gs = 0 v g d s i dr t off 10 c iss c oss c rss 500 300 1000 common source v ds = 5 v ta = 25c total gate charge qg (nc) dynamic input characteristic gate-source voltage v gs (v) 0 0 v dd = 15 v 2 4 8 6 10 6 2 common source i d = 1.6a ta = 25c v dd = 24 v 4 1 3 5
SSM5H11TU 2014-03-01 6 schottky barrier diode instantaneous forward current i f (ma) instantaneous forward voltage v f (v) i f ? v f ta m a x ? i f (av) maximum allowable temperature ta max (c) average forward current i f (av) (a) p f(av) ? i f(av) average forward power dissipation p f (av) (w) average forward current i f (av) (a) capacitance c t (pf) reverse voltage v r (v) c t ? v r (typical) 1000 0 10 100 0.1 1 0.4 25 c 0.5 0.1 0.3 0.2 0.4 0 0.1 1.0 0.8 0.3 1.2 0.5 0.6 0.4 0.2 0 dc = 30 = 30 60 90 120 180 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 20 40 60 80 100 120 140 dc 1 1 10 100 10 100 f = 1 mhz ta = 25c 360 0 rectangular waveform conduction angle
SSM5H11TU 2014-03-01 7 schottky barrier diode reverse current i r ( a) reverse voltage v r (v) i r ? v r junction temperature t j (c) i r ? t j (typical)) reverse current i r (ma) average reverse power dissipation p r (av) (w) reverse voltage v r (v) p r (av) ? v r (typical) 1000 0 100 1 10 25 25 c 10 15 30 5 20 0.01 0 50 100 150 0.1 10 1000 100 v r = 3 v 5 10 20 30 15 pulse test 1 0 0 10 15 20 2 4 6 8 = 60 120 180 240 300 dc 5 360 0 rectangular waveform conduction angle t j = 125c v r
SSM5H11TU 2014-03-01 8 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively "toshiba"), reserve the right to make changes to the in formation in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba's written permission, reproduc tion is permissible only if reproduction is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the "toshiba semiconductor reliability handbook" and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? product is neither intended nor warranted fo r use in equipments or systems that require extraordinarily high levels of quality and/or reliability, and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage and/or serious public impact ( " unintended use " ). except for specific appl ications as expressly stated in this document, unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used f or automobiles, trains, ships and other transportation, traffic si gnaling equipment, equipment used to control combustions or expl osions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. if you use product for unintended use, toshiba assumes no liability for product. for details, please contact your toshiba sales representative. ? do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy product, whether in whole or in part. ? product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. ? the information contained herein is pres ented only as guidance for product use. no re sponsibility is assumed by toshiba for an y infringement of patents or any other intellectual property rights of third parties that may result from the use of product. no license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ? absent a written signed agreement, except as provid ed in the relevant terms and conditions of sale for product, and to the maximum extent allowable by law, toshiba (1) assumes no liability wh atsoever, including without limitation, indirect, co nsequential, special, or incidental damages or loss, including without limitation, loss of profit s, loss of opportunities, business interruption and loss of data, and (2) disclaims any and all express or implied warranties and conditions related to sale, use of product, or information, including warranties or conditions of merchantability, fitness for a particular purpose, accuracy of information, or noninfringement. ? do not use or otherwise make available product or related so ftware or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or m anufacturing of nuclear, chemical , or biological weapons or missi le technology products (mass destruction w eapons). product and related software and technology may be controlled under the applicable export laws and regulations including, without limitat ion, the japanese foreign exchange and foreign trade law and t he u.s. export administration regulations. export and re-export of pr oduct or related software or technology are strictly prohibit ed except in compliance with all appl icable export laws and regulations. ? please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of pro duct. please use product in compliance with all applicable laws and regula tions that regulate the inclusion or use of controlled subs tances, including without limitation, the eu rohs directive. toshiba assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.
|
